Advances in Bragg stack quantum well solar cells

被引：53

作者：

Johnson, DC

Ballard, I

Barnham, KWJ

Bishnell, DB

Connolly, JP

Lynch, MC

Tibbits, TND

Ekins-Daukes, NJ

Mazzer, M

Airey, R

Hill, G

Roberts, JS

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, London SW7 2BW, England

[2] Toyota Technol Inst, Semicond Lab, Tempaku Ku, Nagoya, Aichi 4688511, Japan

[3] Univ Lecce, CNR, IME, I-73100 Lecce, Italy

[4] Univ Sheffield, Sheffield S1 3JD, S Yorkshire, England

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2005年 / 87卷 / 1-4期

关键词：

quantum well cells; distributed Bragg reflector (DBR); strain balance; InGaAs; GaAsP;

D O I：

10.1016/j.solmat.2004.09.014

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Strain-balanced quantum well solar cells (SB-QWSC) extend the photon absorption edge beyond that of bulk GaAs by incorporation of quantum wells in the i-region of a p-i-n device. The addition of a distributed Bragg reflector (DBR) can substantially increase the photocurrent with little or no detriment to the dark-current. Experimental results are presented that show improvements of DBR cell efficiencies over SB-QWSC's without DBR's. In addition, at high dark-current levels appropriate to high concentration, we observe that the dark-currents of the SB-QWSC's exhibit ideal diode behaviour. We present evidence that the ideality n = 1 dark-current is reduced in the DBR cells and discuss the possible efficiency improvements if the dark-current is radiatively dominant. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：169 / 179

页数：11

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