Segregation of In to Dislocations in InGaN

被引：53

作者：

Horton, Matthew K. ^{[1
]}

Rhode, Sneha ^{[2
]}

Sahonta, Suman-Lata ^{[2
]}

Koppers, Menno J. ^{[2
]}

Haigh, Sarah J. ^{[3
]}

Pennycook, Timothy J. ^{[4
,5
]}

Humphreys, Colin J. ^{[2
]}

Dusane, Rajiv O. ^{[6
]}

Moram, Michelle A. ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England

[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB3 0FS, England

[3] Univ Manchester, Sch Mat, Manchester M13 9PL, Lancs, England

[4] STFC Daresbury Labs, SuperSTEM, Warrington WA4 4AD, Cheshire, England

[5] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

[6] Indian Inst Technol, Dept Met Engn & Mat Sci, Bombay 400076, Maharashtra, India

来源：

NANO LETTERS | 2015年 / 15卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

Dislocations; III-nitrides; Monte Carlo; alloy segregation; atomistic modeling; STEM-EDX; SCREW DISLOCATIONS; GAN; LOCALIZATION; PARAMETERS; EDGE;

D O I：

10.1021/nl5036513

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Dislocations are one-dimensional topological defects that occur frequently in functional thin film materials and that are known to degrade the performance of InxGa1-xN-based optoelectronic devices. Here, we show that large local deviations in alloy composition and atomic structure are expected to occur in and around dislocation cores in InxGa1-xN alloy thin films. We present energy-dispersive X-ray spectroscopy data supporting this result. The methods presented here are also widely applicable for predicting composition fluctuations associated with strain fields in other inorganic functional material thin films.

引用

页码：923 / 930

页数：8

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