High-resolution X-ray diffraction study of CZ-grown GaAsP crystals

被引：1
|
作者：
Kowalski, G. [1 ]
Gronkowski, J. [1 ]
Czyzak, A. [1 ]
Slupinski, T. [1 ]
Borowski, J. [1 ]
机构：
[1] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 08期
关键词：
D O I：
10.1002/pssa.200675660
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report results of X-ray investigations of tellurium-doped GaAs1-xPx (with 0.07 <= x <= 0.20) single crystals, conducted in order to support finding proper growth parameters which would yield a material of sufficient homogeneity of the lattice parameter for prospective applications. Our samples were studied using high-resolution diffractometry which allowed to obtain both rocking curves and reciprocal space maps of the diffracted intensity, as well as using plane-wave topography in the reflection mode. Weak reflections were also used to study the influence of Te atoms on the compound lattice. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：2578 / 2584
页数：7
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