Multi-cycle RHEED oscillation under nitrogen supply in alternative source supply AlN growth by rf-MBE

被引：5

作者：

Kaneko, Mitsuaki ^{[1
]}

Hirai, Kazuto ^{[1
]}

Kimoto, Tsunenobu ^{[1
]}

Suda, Jun ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

来源：

APPLIED PHYSICS EXPRESS | 2020年 / 13卷 / 02期

关键词：

MOLECULAR-BEAM EPITAXY; DROPLET-FREE; SURFACE; FILMS; INN; GAN;

D O I：

10.7567/1882-0786/ab6588

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An alternative source supply sequence was applied to aluminum nitride (AlN) growth by rf-plasma-assisted molecular-beam epitaxy on silicon carbide (SiC) substrates with a high-quality AlN template layer. Under a nitrogen-only source supply after aluminum source supply, multi-cycle oscillations of reflection high-energy electron diffraction (RHEED) intensity were observed, which were due to layer-by-layer growth of the AlN layer. The RHEED oscillation under nitrogen-only supply indicates that excess aluminum exists on the surface as a few-monolayer-thick wetting layer along with microdroplets. By repeating the sequence, a 105 nm thick high-quality AlN layer was coherently grown on a SiC substrate without aluminum droplets.

引用

页数：4

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