High-Performance Polycrystalline Silicon Thin-Film Transistors Based on Metal-Induced Crystallization in an Oxidizing Atmosphere

被引：11

作者：

Chen, Rongsheng ^{[1
]}

Zhou, Wei ^{[1
]}

Zhang, Meng ^{[1
]}

Wong, Man ^{[1
]}

Kwok, Hoi-Sing ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, State Key Lab Adv Displays & Optoelect Technol, Hong Kong, Hong Kong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 05期

关键词：

Polycrystalline silicon; thin-film transistors (TFTs); metal-induced crystallization (MIC); oxygen annealing; PHASE; OXIDATION;

D O I：

10.1109/LED.2015.2409858

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An oxidizing rather than the commonly used nonoxidizing atmosphere is used to carry out the thermal process required by the metal-induced crystallization (MIC) of amorphous silicon. Thin-film transistors fabricated on the resulting polycrystalline silicon (poly-Si) exhibit improved device characteristics. Since thermal oxidation is known to induce the injection of silicon interstitials, the improvement is attributed to a reduction in the defect population caused by the incorporation of the injected silicon interstitials in the grain boundaries of the MIC poly-Si.

引用

页码：460 / 462

页数：3

共 13 条

[1] FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON [J].

HU, SM .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1567-1573

[2] Nickel induced crystallization of amorphous silicon thin films [J].

Jin, ZH ;

Bhat, GA ;

Yeung, M ;

Kwok, HS ;

Wong, M .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (01) :194-200

[3] Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O-vapor annealing probed using point-contact devices [J].

Kamiya, T ;

Durrani, ZAK ;

Ahmed, H ;

Sameshima, T ;

Furuta, Y ;

Mizuta, H ;

Lloyd, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (03) :1000-1003

[4] High performance low temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applications [J].

Meng, ZG ;

Wang, MX ;

Wong, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (02) :404-409

[5] EFFECTS OF THE PRESENCE ABSENCE OF HCL DURING ATE OXIDATION ON THE ELECTRICAL AND STRUCTURAL-PROPERTIES OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS [J].

PROANO, RE ;

AST, DG .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (05) :2189-2199

[6] XECL EXCIMER LASER ANNEALING USED IN THE FABRICATION OF POLY-SI TFTS [J].

SAMESHIMA, T ;

USUI, S ;

SEKIYA, M .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) :276-278

[7] Estimation of the number of interstitial atoms injected in silicon during thin oxide formation [J].

Skarlatos, D ;

Omri, M ;

Claverie, A ;

Tsoukalas, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (06) :2276-2283

[8] The effects of high temperature annealing on metal-induced laterally crystallized polycrystalline silicon [J].

Wang, MX ;

Meng, ZG ;

Wong, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (11) :2061-2067

[9] PASSIVATION KINETICS OF 2 TYPES OF DEFECTS IN POLYSILICON TFT BY PLASMA HYDROGENATION [J].

WU, IW ;

HUANG, TY ;

JACKSON, WB ;

LEWIS, AG ;

CHIANG, A .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (04) :181-183

[10] POLYCRYSTALLINE SILICON THIN-FILMS PROCESSED WITH SILICON ION-IMPLANTATION AND SUBSEQUENT SOLID-PHASE CRYSTALLIZATION - THEORY, EXPERIMENTS, AND THIN-FILM-TRANSISTOR APPLICATIONS [J].

YAMAUCHI, N ;

REIF, R .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (07) :3235-3257

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