Silicon micromachined W-band hybrid coupler and power divider using DRIE technique

被引：28

作者：

Li, Y. ^{[1
]}

Kirby, P. L. ^{[1
]}

Offranc, O. ^{[2
]}

Papapolymerou, J. ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, GEDC, Atlanta, GA 30332 USA

[2] CNRS, IEMN, UMR 8520, F-59652 Villeneuve Dascq, France

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2008年 / 18卷 / 01期

基金：

美国国家科学基金会;

关键词：

deep-reactive ion etching (DRIE); hybrid coupler; silicon micromachining;

D O I：

10.1109/LMWC.2007.911978

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a silicon micromachined W-band hybrid coupler and a power divider using deep-reactive ion etching (DRIE) technique are presented. They are designed in the H-plane of rectangular waveguide to utilize DRIE technique. The hybrid coupler adopts a ridged waveguide 90 degrees phase shifter and a joint waveguide. The power divider utilizes a T-shape configuration. The simulated and measured response of each circuit are presented in this letter where good agreement between them is achieved. Then, the measured combining efficiency is reported by cascading the power divider and the hybrid coupler.

引用

页码：22 / 24

页数：3

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