Thermally stimulated current spectroscopy on silicon planar-doped GaAs samples

被引：14

作者：

Rubinger, RM ^{[1
]}

Bezerra, JC ^{[1
]}

Chagas, EF ^{[1
]}

Gonzalez, JC ^{[1
]}

Rodrigues, WN ^{[1
]}

Ribeiro, GM ^{[1
]}

Moreira, MVB ^{[1
]}

de Oliveira, AG ^{[1
]}

机构：

[1] Univ Fed Minas Gerais, Inst Ciencias Exatas, Dept Fis, BR-30161970 Belo Horizonte, MG, Brazil

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 07期

关键词：

D O I：

10.1063/1.368588

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using thermally stimulated current (TSC) spectroscopy we have identified the presence of several deep traps in low temperature grown (LTG) nonintentionally doped bulk molecular beam epitaxy (MBE)-GaAs and silicon planar-doped MBE-GaAs samples. The experiments of TSC spectroscopy were carried out on a LTG MBE-GaAs epilayer grown at 300 degrees C and the planar-doped layer with a nominal silicon concentration of 3.4 X 10(12) cm(-2). The LTG nonintentionally doped bulk MBE-GaAs sample shows three peaks in the TSC spectra but the planar-doped MBE-GaAs sample shows spectra similar to those of bulk samples grown by the liquid-encapsulated Czochralski and vertical gradient freeze methods. The main achievement is the experimental evidence that the potential well present in the planar-doped sample is effective in detecting the presence of different deep traps previously not seen in LTG bulk MBE-GaAs epilayers due to a shorter carrier lifetime (about 10(-12) s) in the conduction band which occurs due to EL2-like deep traps recombination. This fact is evidenced by a strong hopping conduction in LTG bulk MBE-GaAs samples at temperatures lower than 300 K, but not in planar-doped MBE-GaAs samples because the two-dimensional electron gas has a higher mobility than lateral LTG bulk MBE-GaAs epilayers. (C) 1998 American Institute of Physics. [S0021-8979(98)09016-1]

引用

页码：3764 / 3769

页数：6

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