An ellipsometric study of the oxidation of thin copper films in oxygen

被引：8

作者：

Khoviv, AM ^{[1
]}

Nazarenko, IN ^{[1
]}

Churikov, AA ^{[1
]}

机构：

[1] Voronezh State Univ, Voronezh 394893, Russia

来源：

INORGANIC MATERIALS | 2001年 / 37卷 / 05期

基金：

俄罗斯基础研究基金会;

关键词：

Oxidation; Oxygen; Copper; Silicon; Activation Energy;

D O I：

10.1023/A:1017524700274

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The thermal oxidation of thin copper films deposited on single-crystal silicon was studied by ellipsometry. The optical properties of the oxide layers grown at 420-470 K over a period of up to 150 min were found to vary with layer thickness in a complex manner. The results were analyzed in terms of single- and two-layer models. The oxidation kinetics were shown to follow a parabolic rate law The apparent activation energies for different stages of oxidation were evaluated with allowance for the self-organization of the interfacial layer.

引用

页码：473 / 475

页数：3