Nanocavities: an effective gettering method for silicon-on-insulator wafers

The 4 x 10(16)/cm(2) H+ and 9 x 10(16)/cm(2) He+ have been implanted into the silicon substrate of separation-by-implantation-of oxygen (SIMOX) wafers, respectively, followed by a 700 degrees C annealing to form nanocavities beneath the buried oxide (BOX) layer. The SIMOX wafers were intentionally contaminated with Cu impurities by implanting different doses of Cn in the top Si layer. Secondary ion mass spectroscopy and cross-sectional transmission electron microscopy technologies have been employed to investigate the gettering effect of nanocavities to the Cu impurities. The cavities induced either by H+ or He+ implantation are effective gettering centers for Cu in SIMOX wafers. After annealing at 1000 degrees C for 90 min, up to 4 x 10(15)/cm(2) Cu has diffused through the BOX layer and been captured by the cavities. The gettering efficiency of cavities increases with the decrease of Cu implantation doses. The nanocavities provide an attractive method for gettering transition metal impurities in SIMOX materials.