Photogating of mono- and few-layer MoS2

被引：93

作者：

Miller, Bastian ^{[1
,2
,3
]}

Parzinger, Eric ^{[1
,2
,3
]}

Vernickel, Anna ^{[1
,2
,3
]}

Holleitner, Alexander W. ^{[1
,2
,3
]}

Wurstbauer, Ursula ^{[1
,2
,3
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[2] Tech Univ Munich, Dept Phys, D-85748 Garching, Germany

[3] NIM, D-80799 Munich, Germany

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 12期

关键词：

MONOLAYER MOS2; PHOTOLUMINESCENCE; RAMAN; EMISSION; GRAPHENE;

D O I：

10.1063/1.4916517

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe a photogating effect in mono- and few-layer MoS2, which allows the control of the charge carrier density by almost two orders of magnitude without electrical contacts. Our Raman studies are consistent with physisorbed environmental molecules, which effectively deplete the intrinsically n-doped charge carrier system via charge transfer and which can be gradually removed by the exposure to light. This photogating process is reversible and precisely tunable by the light intensity. The photogating efficiency is quantified by comparison with measurements on electrostatically gated MoS2. (C) 2015 AIP Publishing LLC.

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页数：4

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