S-doped TiO2 layers were grown on titanium substrates by MAO process. SEM results revealed a porous morphology with a pore size of 40-100 am. Our XRD analysis showed that the anatase relative content reached its maximum value at the voltage of 500 V. The existence of sulfur in the states of S4+ and S6+ which substituted Ti4+ in the titania crystalline lattice was confirmed by XPS results; meanwhile, no S2- was detected. That is, a cationic doping was observed. EDS results showed that sulfur concentration ill the layers increased with the voltage. The band gap energy was also calculated as 2.29 eV employing a UV-Vis spectrophotometer. (C) 2010 Elsevier B.V. All rights reserved.
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Zhengzhou Univ, Coll Mat Sci & Engn, Zhengzhou 450052, Peoples R China
Ancai Hitech Co Ltd, Anyang 455000, Peoples R ChinaZhengzhou Univ, Coll Mat Sci & Engn, Zhengzhou 450052, Peoples R China
Dong, Lin
Ma, Ying
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Zhengzhou Univ, Coll Mat Sci & Engn, Zhengzhou 450052, Peoples R ChinaZhengzhou Univ, Coll Mat Sci & Engn, Zhengzhou 450052, Peoples R China
Ma, Ying
Wang, Yuwei
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Zhengzhou Univ, Coll Mat Sci & Engn, Zhengzhou 450052, Peoples R ChinaZhengzhou Univ, Coll Mat Sci & Engn, Zhengzhou 450052, Peoples R China
Wang, Yuwei
Tian, Yongtao
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Zhengzhou Univ, Dept Phys, Zhengzhou 450052, Peoples R ChinaZhengzhou Univ, Coll Mat Sci & Engn, Zhengzhou 450052, Peoples R China
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Ye, Guotian
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Zhengzhou Univ, Coll Mat Sci & Engn, Zhengzhou 450052, Peoples R ChinaZhengzhou Univ, Coll Mat Sci & Engn, Zhengzhou 450052, Peoples R China
Ye, Guotian
Jia, Xiaolin
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Zhengzhou Univ, Coll Mat Sci & Engn, Zhengzhou 450052, Peoples R ChinaZhengzhou Univ, Coll Mat Sci & Engn, Zhengzhou 450052, Peoples R China
Jia, Xiaolin
Cao, Guoxi
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Ancai Hitech Co Ltd, Anyang 455000, Peoples R ChinaZhengzhou Univ, Coll Mat Sci & Engn, Zhengzhou 450052, Peoples R China
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Zhengzhou Univ, Coll Mat Sci & Engn, Zhengzhou 450052, Peoples R China
Ancai Hitech Co Ltd, Anyang 455000, Peoples R ChinaZhengzhou Univ, Coll Mat Sci & Engn, Zhengzhou 450052, Peoples R China
Dong, Lin
Ma, Ying
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Zhengzhou Univ, Coll Mat Sci & Engn, Zhengzhou 450052, Peoples R ChinaZhengzhou Univ, Coll Mat Sci & Engn, Zhengzhou 450052, Peoples R China
Ma, Ying
Wang, Yuwei
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Zhengzhou Univ, Coll Mat Sci & Engn, Zhengzhou 450052, Peoples R ChinaZhengzhou Univ, Coll Mat Sci & Engn, Zhengzhou 450052, Peoples R China
Wang, Yuwei
Tian, Yongtao
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Zhengzhou Univ, Dept Phys, Zhengzhou 450052, Peoples R ChinaZhengzhou Univ, Coll Mat Sci & Engn, Zhengzhou 450052, Peoples R China
Tian, Yongtao
Ye, Guotian
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Zhengzhou Univ, Coll Mat Sci & Engn, Zhengzhou 450052, Peoples R ChinaZhengzhou Univ, Coll Mat Sci & Engn, Zhengzhou 450052, Peoples R China
Ye, Guotian
Jia, Xiaolin
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Zhengzhou Univ, Coll Mat Sci & Engn, Zhengzhou 450052, Peoples R ChinaZhengzhou Univ, Coll Mat Sci & Engn, Zhengzhou 450052, Peoples R China
Jia, Xiaolin
Cao, Guoxi
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