1310nm silicon evanescent laser

被引：74

作者：

Chang, Hsu-Hao ^{[1
]}

Fang, Alexander W.

Sysak, Matthew N.

Park, Hyundai

Jones, Richard

Cohen, Oded

Raday, Omri

Paniccia, Mario J.

Bowers, John E.

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Intel Corp, Santa Clara, CA 95054 USA

[3] Intel Corp, IL-91031 Jerusalem, Israel

来源：

OPTICS EXPRESS | 2007年 / 15卷 / 18期

关键词：

D O I：

10.1364/OE.15.011466

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report the first 1310 nm hybrid laser on a silicon substrate. This laser operates continuous wave (C.W.) up to 105 degrees C. The room temperature threshold current of this laser is 30 mA, and the maximum single sided fiber-coupled output power is 5.5 mW. (C) 2007 Optical Society of America.

引用

页码：11466 / 11471

页数：6

共 12 条

[1] Wafer scale photonic-die attachment [J].

Boudreau, R ;

Zhou, P ;

Bowen, T .

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART B-ADVANCED PACKAGING, 1998, 21 (02) :136-139

[2] Demonstration of a silicon Raman laser [J].

Boyraz, O ;

Jalali, B .

OPTICS EXPRESS, 2004, 12 (21) :5269-5273

[3] The carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting lasers [J].

Chang, Yi-An ;

Ko, Tsung-Shine ;

Chen, Jun-Rong ;

Lai, Fang-I ;

Yu, Chun-Lung ;

Wu, I-Tsung ;

Kuo, Hao-Chung ;

Kuo, Yen-Kuang ;

Laih, Li-Wen ;

Laih, Li-Horng ;

Lu, Tin-Chang ;

Wang, Shing-Chung .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (10) :1488-1494

[4] Electrically pumped hybrid AlGaInAs-silicon evanescent laser [J].

Fang, Alexander W. ;

Park, Hyundai ;

Cohen, Oded ;

Jones, Richard ;

Paniccia, Mario J. ;

Bowers, John E. .

OPTICS EXPRESS, 2006, 14 (20) :9203-9210

[5] Integrated AlGaInAs-silicon evanescent racetrack laser and photodetector [J].

Fang, Alexander W. ;

Jones, Richard ;

Park, Hyundai ;

Cohen, Oded ;

Raday, Omri ;

Paniccia, Mario J. ;

Bowers, John E. .

OPTICS EXPRESS, 2007, 15 (05) :2315-2322

[6]

*FIMMW, PHOT DES

[7] A hybrid AlGaInAs-silicon evanescent amplifier [J].

Park, Hyundai ;

Fang, Alexander W. ;

Cohen, Oded ;

Jones, Richard ;

Paniccia, Mario J. ;

Bowers, John E. .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (2-4) :230-232

[8] Plasma-assisted InP-to-Si low temperature wafer bonding [J].

Pasquariello, D ;

Hjort, K .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (01) :118-131

[9] Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a Silicon-on-Insulator waveguide circuit [J].

Roelkens, G. ;

Van Thourhout, D. ;

Baets, R. ;

Notzel, R. ;

Smit, M. .

OPTICS EXPRESS, 2006, 14 (18) :8154-8159

[10] Heterogeneous integration of electrically driven microdisk based laser sources for optical interconnects and photonic ICs [J].

Romeo, PR ;

Van Campenhout, J ;

Regreny, P ;

Kazmierczak, A ;

Seassal, C ;

Letartre, X ;

Hollinger, G ;

Van Thourhout, D ;

Baets, R ;

Fedeli, M ;

Di Cioccio, L .

OPTICS EXPRESS, 2006, 14 (09) :3864-3871

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