Thickness dependence of dielectric loss in SrTiO3 thin films

被引:173
|
作者
Li, HC [1 ]
Si, WD
West, AD
Xi, XX
机构
[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[2] Chinese Acad Sci, Inst Phys, Natl Lab Superconduct, Beijing 100080, Peoples R China
关键词
D O I
10.1063/1.121901
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have measured the dielectric loss in SrTiO3 thin films grown on SrRuO3 electrode layers with thickness ranging from 25 nm to 2.5 mu m. The loss depends strongly on the thickness but differently above and below T approximate to 80 K: as the thickness increases, the loss decreases at high temperatures but becomes higher at low temperatures. Our result suggests that, in the high temperature regime, the interfacial dead layer effect dominates while, in the low temperature regime, the losses related to the structural phase transition and quantum fluctuations are important. (C) 1998 American Institute af Physics.
引用
收藏
页码:464 / 466
页数:3
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