93.7 W 1112 nm Diode-Side-Pumped CW Nd:YAG Laser

被引:13
作者
Li, C. Y. [1 ]
Wang, Z. C. [1 ]
Xu, Y. T. [1 ]
Yang, F. [1 ]
Wang, B. S. [1 ]
Gao, H. W. [1 ]
Bo, Y. [1 ]
Peng, Q. J. [1 ]
Cui, D. F. [1 ]
Xu, Z. Y. [1 ]
机构
[1] Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Funct Crystal & Laser Technol, RCLT, Beijing 100190, Peoples R China
基金
中国国家自然科学基金;
关键词
ND3+;
D O I
10.1134/S1054660X10130098
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We demonstrate a high power continuous wave (CW) infrared laser operated at 1112 nm from a diode side-pumped Nd: YAG crystal with a plano-plano symmetrical resonator. By inserting an etalon, an output power of as high as 93.7 W at 1112 nm was obtained at the pump power of 570 W with conversion efficiency of 16.4%. The beam quality factor of M-2 was measured to be about 17. The wavelength tunable performance of the etalon was also analyzed. To the best of our knowledge, it is the highest output power at 1112 nm CW laser based on Nd:YAG crystal.
引用
收藏
页码:1572 / 1576
页数:5
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