Designed Organophosphonate Self-Assembled Monolayers Enhance Device Performance of Pentacene-Based Organic Thin-Film Transistors

被引：52

作者：

Liao, Kung-Ching ^{[1
]}

Ismail, Ahmad G. ^{[2
]}

Kreplak, Laurent ^{[2
]}

Schwartz, Jeffrey ^{[1
]}

Hill, Ian G. ^{[2
]}

机构：

[1] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA

[2] Dalhousie Univ, Dept Phys, Halifax, NS B3H 3J5, Canada

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 28期

基金：

加拿大创新基金会; 加拿大自然科学与工程研究理事会; 美国国家科学基金会;

关键词：

FIELD-EFFECT TRANSISTORS; NATIVE-OXIDE SURFACE; SEMICONDUCTORS; DIELECTRICS; CRYSTAL; SILICON; ACID;

D O I：

10.1002/adma.201001310

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Excellent device characteristics are measured for a pentacene-based thin film transistor where the SiO2 gate dielectric is terminated with a self-assembled monolayer of 9,10-dinaphthylanthracene-2-phosphonate in which calculated molecular spacings are about 0.7 nm. This creates channels that are on the order of the "thickness" of an aromatic pi system, which allows intercalation of pentacene units, favoring a pi-stacking motif for this first pentacene layer.

引用

收藏

页码：3081 / 3085

页数：5

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