Electron and hole transfer from indium phosphide quantum dots

被引：113

作者：

Blackburn, JL ^{[1
]}

Selmarten, DC ^{[1
]}

Ellingson, RJ ^{[1
]}

Jones, M ^{[1
]}

Micic, O ^{[1
]}

Nozik, AJ ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

JOURNAL OF PHYSICAL CHEMISTRY B | 2005年 / 109卷 / 07期

关键词：

D O I：

10.1021/jp046781y

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Electron- and hole-transfer reactions are studied in colloidal InP quantum dots (QDs). Photoluminescence quenching and time-resolved transient absorption (TA) measurements are utilized to examine hole transfer from photoexcited InP QDs to the hole acceptor N,N,N',N'-tetramethyl-p-phenylenediamine (TMPD) and electron transfer to nanocrystalline titanium dioxide (TiO2) films. Core-confined holes are effectively quenched by TMPD, resulting in a new similar to4-ps component in the TA decay. It is found that electron transfer to TiO2 is primarily mediated through surface-localized states on the InP QDs.

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页码：2625 / 2631

页数：7

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