Phaw noise study of AlGaN/GaN HEMT X-band oscillator

被引：6

作者：

Danylyuk, SV ^{[1
]}

Vitusevich, SA ^{[1
]}

Kaper, V ^{[1
]}

Tilak, V ^{[1
]}

Klein, N ^{[1
]}

Eastman, LF ^{[1
]}

Shealy, JR ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Schichten & Grenazflachen, D-52425 Julich, Germany

来源：

Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7 | 2005年 / 2卷 / 07期

关键词：

D O I：

10.1002/pssc.200461457

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

AlGaM/GaN high electron mobility transistor (HEMT) heterostructures were investigated by noise spectral density measurements. The heterostructure layers are grown without intentionally doping the barrier material and two-dimensional gas appears at the interface only due to polarization effects. Low-frequency noise spectra of the HEMT were studied in a wide range of applied voltages. They demonstrated a deviation from 1/f dependence at high applied drain-source voltages due to increasing dissipated power. The phase noise of a monolithic microwave integrated circuit oscillator based on the AlGaN/GaN HEMT amplifier was investigated. In spite of the low value of the resonator quality factor of 20, a low level of the phase noise of the oscillator was registered. The up-conversion factor was found to be as low as 15 MHz/V for frequency offset 100 kHz, demonstrating that AlGaN/GaN HEMTs offer an excellent potential for a wide range of microwave applications. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2615 / 2618

页数：4

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