Nanoscale imaging of the electronic and structural transitions in vanadium dioxide

被引：108

作者：

Qazilbash, M. M. ^{[1
,8
]}

Tripathi, A. ^{[1
]}

Schafgans, A. A. ^{[1
]}

Kim, Bong-Jun ^{[2
]}

Kim, Hyun-Tak ^{[2
,3
]}

Cai, Zhonghou ^{[4
]}

Holt, M. V. ^{[5
]}

Maser, J. M. ^{[5
]}

Keilmann, F. ^{[6
,7
]}

Shpyrko, O. G. ^{[1
]}

Basov, D. N. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

[2] ETRI, Met Insulator Transit Ctr, Taejon 305350, South Korea

[3] Univ Sci & Technol, Sch Adv Device Technol, Taejon 305333, South Korea

[4] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA

[5] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA

[6] Max Planck Inst Quantum Opt, Munich Ctr Adv Photon, D-85748 Garching, Germany

[7] Ctr NanoSci, D-85748 Garching, Germany

[8] Coll William & Mary, Dept Phys, Williamsburg, VA 23187 USA

来源：

PHYSICAL REVIEW B | 2011年 / 83卷 / 16期

关键词：

MANGANITE THIN-FILM; MOTT TRANSITION; VO2; SCATTERING;

D O I：

10.1103/PhysRevB.83.165108

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the electronic and structural changes at the nanoscale in vanadium dioxide (VO2) in the vicinity of its thermally driven phase transition. Both electronic and structural changes exhibit phase coexistence leading to percolation. In addition, we observe a dichotomy between the local electronic and structural transitions. Nanoscale x-ray diffraction reveals local, nonmonotonic switching of the lattice structure, a phenomenon that is not seen in the electronic insulator-to-metal transition mapped by near-field infrared microscopy.

引用

页数：7

共 36 条

[1] Evidence of a pressure-induced metallization process in monoclinic VO2 [J].

Arcangeletti, E. ;

Baldassarre, L. ;

Di Castro, D. ;

Lupi, S. ;

Malavasi, L. ;

Marini, C. ;

Perucchi, A. ;

Postorino, P. .

PHYSICAL REVIEW LETTERS, 2007, 98 (19)

[2] Evidence for a structurally-driven insulator-to-metal transition in VO2:: A view from the ultrafast timescale -: art. no. 161102 [J].

Cavalleri, A ;

Dekorsy, T ;

Chong, HHW ;

Kieffer, JC ;

Schoenlein, RW .

PHYSICAL REVIEW B, 2004, 70 (16) :1-4

[3] Highly oriented VO2 thin films prepared by sol-gel deposition [J].

Chae, BG ;

Kim, HT ;

Yun, SJ ;

Kim, BJ ;

Lee, YW ;

Youn, DH ;

Kang, KY .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2006, 9 (01) :C12-C14

[4] Surface versus bulk characterizations of electronic inhomogeneity in a VO2 thin film [J].

Chang, Y. J. ;

Yang, J. S. ;

Kim, Y. S. ;

Kim, D. H. ;

Noh, T. W. ;

Kim, D.-W. ;

Oh, E. ;

Kahng, B. ;

Chung, J.-S. .

PHYSICAL REVIEW B, 2007, 76 (07)

[5] Nematic Electronic Structure in the "Parent" State of the Iron-Based Superconductor Ca(Fe1-xCox)2As2 [J].

Chuang, T. -M. ;

Allan, M. P. ;

Lee, Jinho ;

Xie, Yang ;

Ni, Ni ;

Bud'ko, S. L. ;

Boebinger, G. S. ;

Canfield, P. C. ;

Davis, J. C. .

SCIENCE, 2010, 327 (5962) :181-184

[6] Memory Metamaterials [J].

Driscoll, T. ;

Kim, Hyun-Tak ;

Chae, Byung-Gyu ;

Kim, Bong-Jun ;

Lee, Yong-Wook ;

Jokerst, N. Marie ;

Palit, S. ;

Smith, D. R. ;

Di Ventra, M. ;

Basov, D. N. .

SCIENCE, 2009, 325 (5947) :1518-1521

[7] Photoemission evidence for a Mott-Hubbard metal-insulator transition in VO2 [J].

Eguchi, R. ;

Taguchi, M. ;

Matsunami, M. ;

Horiba, K. ;

Yamamoto, K. ;

Ishida, Y. ;

Chainani, A. ;

Takata, Y. ;

Yabashi, M. ;

Miwa, D. ;

Nishino, Y. ;

Tamasaku, K. ;

Ishikawa, T. ;

Senba, Y. ;

Ohashi, H. ;

Muraoka, Y. ;

Hiroi, Z. ;

Shin, S. .

PHYSICAL REVIEW B, 2008, 78 (07)

[8]

Eyert V, 2002, ANN PHYS-BERLIN, V11, P650, DOI 10.1002/1521-3889(200210)11:9<650::AID-ANDP650>3.0.CO

[9]

2-K

[10] Nanofabrication of high aspect ratio 24 nm x-ray zone plates for x-ray imaging applications [J].

Feng, Yan ;

Feser, Michael ;

Lyon, Alan ;

Rishton, Steve ;

Zeng, Xianghui ;

Chen, Sharon ;

Sassolini, Simone ;

Yun, Wenbing .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (06) :2004-2007

← 1 2 3 4 →