Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier

被引：0

作者：

Varonen, Mikko ^{[1
]}

Cleary, Kieran ^{[2
]}

Karaca, Denizhan ^{[3
]}

Halonen, Kari A. I. ^{[3
]}

机构：

[1] VTT Tech Res Ctr Finland, MilliLab, Espoo, Finland

[2] CALTECH, Cahill Radio Astron Lab, Pasadena, CA 91125 USA

[3] Aalto Univ, Espoo, Finland

来源：

2018 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM - IMS | 2018年

基金：

芬兰科学院;

关键词：

CMOS; Cryogenic; low-noise amplifiers; MMIC;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we report a cryogenically cooled CMOS amplifier covering at least 75 to 115 GHz frequency range. The amplifier chip was fabricated in 28-nm FD SOI CMOS technology. When cryogenically cooled to 20 K and measured on-wafer the CMOS amplifier shows 108-155 K noise temperature from 75 to 115 GHz. This means 6 to 8 times improvement in noise temperature compared to room temperature noise. The measured small-signal gain is around 20 dB. To the best of authors' knowledge, these are the first cryogenic measurements of millimeter-wave CMOS amplifiers and lowest CMOS LNA noise temperatures for W-Band reported to date.

引用

页码：1503 / 1506

页数：4

共 14 条

[1]

Cha E, 2017, IEEE MTT S INT MICR, P168, DOI 10.1109/MWSYM.2017.8058959

[2]

Chang SW, 2017, IEEE MTT S INT MICR, P157, DOI 10.1109/MWSYM.2017.8058926

[3]

Coskun A, 2014, IEEE INT SYMP CIRC S, P2001, DOI 10.1109/ISCAS.2014.6865556

[4]

Kangaslahti P, 2017, IEEE MTT S INT MICR, P1965, DOI 10.1109/MWSYM.2017.8059049

[5] A 53-117 GHz LNA in 28-nm FDSOI CMOS [J].

Karaca, Denizhan ;

Varonen, Mikko ;

Parveg, Dristy ;

Vahdati, Ali ;

Halonen, Kari A. I. .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2017, 27 (02) :171-173

[6]

Montazeri S, 2017, IEEE MTT S INT MICR, P160, DOI 10.1109/MWSYM.2017.8058937

[7]

Reeves R, 2014, 2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC), P580, DOI 10.1109/EuMIC.2014.6997923

[8] Cryogenic probe station for on-wafer characterization of electrical devices [J].

Russell, Damon ;

Cleary, Kieran ;

Reevesc, Rodrigo .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2012, 83 (04)

[9]

Tang YL, 2017, IEEE MTT S INT MICR, P176, DOI 10.1109/MWSYM.2017.8058981

[10] 200-GHz CMOS amplifier with 9-dB noise figure for atmospheric remote sensing [J].

Varonen, M. ;

Safaripour, A. ;

Parveg, D. ;

Kangaslahti, P. ;

Gaier, T. ;

Hajimiri, A. .

ELECTRONICS LETTERS, 2016, 52 (05) :369-370

← 1 2 →