Effect of strain on the orbital and magnetic ordering of manganite thin films and their interface with an insulator

被引:39
|
作者
Baena, A. [1 ]
Brey, L. [1 ]
Calderon, M. J. [1 ]
机构
[1] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain
来源
PHYSICAL REVIEW B | 2011年 / 83卷 / 06期
关键词
COLOSSAL MAGNETORESISTANCE; TUNNEL-JUNCTIONS; DOUBLE-EXCHANGE; PHASE-DIAGRAM; RECONSTRUCTION; SUPERLATTICES; PHYSICS; OXIDES;
D O I
10.1103/PhysRevB.83.064424
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study the effect of uniform uniaxial strain on the ground-state electronic configuration of a thin-film manganite. Our model Hamiltonian includes the double exchange, the Jahn-Teller electron-lattice coupling, and the antiferromagnetic superexchange. The strain arises due to the lattice mismatch between an insulating substrate and a manganite, which produces a tetragonal distortion. This is included in the model via a modification of the hopping amplitude and the introduction of an energy splitting between the Mn e(g) levels. We analyze the bulk properties of half-doped manganites and the electronic reconstruction at the interface between a ferromagnetic and metallic manganite and the insulating substrate. The strain drives an orbital selection modifying the electronic properties and the magnetic ordering of manganites and their interfaces.
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页数:7
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