Comparative study of 4H-SiC irradiated with neutrons and heavy ions

被引：2

作者：

Kalinina, E ^{[1
]}

Kholuyanov, G

Onushkin, G

Davydov, D

Strel'chuk, A

Konstantinov, A

Hallén, A

Skuratov, V

Kuznetsov, A

机构：

[1] RAS, Ioffe Inst, St Petersburg 194021, Russia

[2] AMDS AB, S-16440 Kista, Sweden

[3] Royal Inst Technol, Dept Elect, SE-16440 Kista, Sweden

[4] Joint Inst Nucl Res, Dubna 141980, Russia

[5] Univ Oslo, Dept Phys, N-0316 Oslo, Norway

来源：

SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷

关键词：

SiC; irradiation; neutrons; bismuth; krypton; luminescence; defects; deep level;

D O I：

10.4028/www.scientific.net/MSF.483-485.377

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of the irradiation with neutrons, Kr+ (245 MeV) and Bi+ (710 MeV) ions on the optical and electrical properties of high-resistivity, high-purity 4H-SiC epitaxial layers grown by chemical vapor deposition was investigated using photoluminescence and deep-level transient spectroscopy. Electrical characteristics were studied using Al and Cr Schottky barriers as well as p(+)-n-n(+) diodes fabricated by Al ion implantation on this epitaxial layers. It was found that both "light" neutrons and high energy heavy ions introduced identical defect centers in 4H-SiC. So, even at extremely high density of the ionization energy of 34 keV/mn, typical for Bi+ ion bombardment, damage structure formation in SiC single crystal is governed by energy loss in elastic collisions.

引用

页码：377 / 380

页数：4

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