Comparative study of 4H-SiC irradiated with neutrons and heavy ions

被引：2
|
作者：
Kalinina, E [1 ]
Kholuyanov, G
Onushkin, G
Davydov, D
Strel'chuk, A
Konstantinov, A
Hallén, A
Skuratov, V
Kuznetsov, A
机构：
[1] RAS, Ioffe Inst, St Petersburg 194021, Russia
[2] AMDS AB, S-16440 Kista, Sweden
[3] Royal Inst Technol, Dept Elect, SE-16440 Kista, Sweden
[4] Joint Inst Nucl Res, Dubna 141980, Russia
[5] Univ Oslo, Dept Phys, N-0316 Oslo, Norway
来源：
SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷
关键词：
SiC; irradiation; neutrons; bismuth; krypton; luminescence; defects; deep level;
D O I：
10.4028/www.scientific.net/MSF.483-485.377
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The influence of the irradiation with neutrons, Kr+ (245 MeV) and Bi+ (710 MeV) ions on the optical and electrical properties of high-resistivity, high-purity 4H-SiC epitaxial layers grown by chemical vapor deposition was investigated using photoluminescence and deep-level transient spectroscopy. Electrical characteristics were studied using Al and Cr Schottky barriers as well as p(+)-n-n(+) diodes fabricated by Al ion implantation on this epitaxial layers. It was found that both "light" neutrons and high energy heavy ions introduced identical defect centers in 4H-SiC. So, even at extremely high density of the ionization energy of 34 keV/mn, typical for Bi+ ion bombardment, damage structure formation in SiC single crystal is governed by energy loss in elastic collisions.
引用
收藏
页码：377 / 380
页数：4
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