Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO3-Based Memory Films

被引：41
作者：
Lin, Meng-Han [1 ,2 ]
Wu, Ming-Chi [1 ,2 ]
Lin, Chen-Hsi [3 ]
Tseng, Tseung-Yuen [1 ,2 ]
机构：
[1] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[3] Winbond Elect Corp, Hsinchu 300, Taiwan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 08期
关键词：
Oxygen vacancies; resistive random access memory (RRAM); resistive switching (RS) mechanism; SrZrO3 (SZO); vanadium doping; ELECTRICAL-PROPERTIES; LOW-POWER; ELECTRODE; VOLTAGE; BIPOLAR;
D O I：
10.1109/TED.2010.2050837
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of vanadium doping on resistive switching (RS) characteristics and mechanisms of RF-sputtered SrZrO3 (SZO)-based thin films are investigated in this paper. The physical and electrical properties of SZO-based thin films are modulated by vanadium doping due to the Zr4+ ion replaced by V5+, further affecting the RS parameters of SZO-based thin films. The conduction mechanisms of SZO-based thin films are dominated by ohmic conduction (hoping conduction) and Frenkel-Poole emission for the low resistance state (LRS) and the high resistance state (HRS), respectively. The turn-on process might be attributed to the formation of conducting filaments consisting of oxygen vacancies with the effective barrier height (phi(B,eff)) in the range of 0.10-0.13 eV, whereas the turn-off process might result from thermally assisted oxidation of oxygen vacancies by the Joule heating effect. Furthermore, the introduction of the high valence cation (V5+) in a Zr4+ site of SZO crystalline structure can suppress the formation of oxygen vacancies due to the charge neutrality restriction. Such suppression leads to the changes in the forming voltage, turn-on voltage, HRS resistance, dielectric constant, and phi(B,eff) with vanadium doping concentration up to 0.2 mol%, which is within the solid solubility limit based on our measured lattice constants and Vegard's law.
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页码：1801 / 1808
页数：8
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