Electron-hole liquid and excitonic molecules in quasi-two-dimensional SiGe layers of Si/SiGe/Si heterostructures

被引：18

作者：

Burbaev, T. M. ^{[1
]}

Gordeev, M. N. ^{[1
]}

Lobanov, D. N. ^{[2
]}

Novikov, A. V. ^{[2
]}

Rzaev, M. M. ^{[1
]}

Sibeldin, N. N. ^{[1
]}

Skorikov, M. L. ^{[1
]}

Tsvetkov, V. A. ^{[1
]}

Shepel, D. V. ^{[1
]}

机构：

[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia

[2] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

来源：

JETP LETTERS | 2010年 / 92卷 / 05期

基金：

俄罗斯基础研究基金会;

关键词：

SI/SI1-XGEX QUANTUM-WELLS; BAND ALIGNMENT; PHOTOLUMINESCENCE;

D O I：

10.1134/S002136401017008X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The electron-hole liquid (EHL) in SiGe layers of Si/Si(1 - x) Ge (x) /Si quantum-confinement heterostructures is discovered. It is composed of quasi-two-dimensional holes in the quantum well formed by the SiGe layer and quasi-three-dimensional electrons, which occupy a wider region of space centered on this layer. The densities of electrons and holes in the EHL are determined to be p (0) a parts per thousand 8.5 x 10(11) cm(-2) and n (0) a parts per thousand 4.8 x 10(18) cm(-3), respectively. It is demonstrated that the gas phase consists of excitons and excitonic molecules. The conditions on the band parameters of the structure under which the formation of the EHL of this kind and biexcitons is possible are formulated.

引用

页码：305 / 309

页数：5

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