Phase transition and optical properties of Ge doped ZnO films synthesised by sputtering

被引：1

作者：

Fan, D. H. ^{[1
]}

Zhang, R. ^{[2
]}

Su, W. A. ^{[3
]}

Zhang, J. Z. ^{[1
]}

机构：

[1] Wuyi Univ, Sch Appl Phys & Mat, Jiangmen 529020, Peoples R China

[2] Shanghai Maritime Univ, Dept Phys, Shanghai 200135, Peoples R China

[3] Jiangxi Univ Sci & Technol, Fac Sci, Ganzhou 341000, Peoples R China

来源：

MATERIALS SCIENCE AND TECHNOLOGY | 2015年 / 31卷 / 01期

关键词：

Ge doped ZnO film; Phase transition; Optical properties; THIN-FILMS; PHOTOLUMINESCENCE PROPERTIES; QUANTUM DOTS; GROWTH; LUMINESCENCE; DEPENDENCE; RAMAN;

D O I：

10.1179/1743284714Y.0000000588

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ge doped ZnO films were deposited on Si substrates by sputtering technique. With the increasing annealing temperature, the crystal quality of samples becomes gradually better and the phase transition can be observed at annealing temperature of 600 degrees C. X-ray photoelectron spectroscopy results show the incorporation of Ge into the ZnO films with 14.81 at-% Ge content. Fourier transform infrared spectroscopy absorption spectra of samples annealed at above 600 degrees C display vibration mode of v ( ZnO4) and v (GeO4) in Zn2GeO4. The enhancement of ultraviolet emission intensity should be attributed to the yielded mass holes caused by Ge doping and the rising crystal quality. The sample annealed at 800 degrees C displays the strongest blue emission due to the native defects in Zn2GeO4 films or/and surface defects.

引用

页码：37 / 42

页数：6

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