Robustness of Topologically Protected Surface States in Layering of Bi2Te3 Thin Films

被引：142

作者：

Park, Kyungwha ^{[1
]}

Heremans, J. J. ^{[1
]}

Scarola, V. W. ^{[1
]}

Minic, Djordje ^{[1
]}

机构：

[1] Virginia Tech, Dept Phys, Blacksburg, VA 24061 USA

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 105卷 / 18期

基金：

美国国家科学基金会;

关键词：

TOTAL-ENERGY CALCULATIONS; SINGLE DIRAC CONE; WAVE BASIS-SET; ELECTRONIC-STRUCTURE; THERMOELECTRIC PROPERTIES; BISMUTH TELLURIDE; INSULATOR; BI2SE3; PHOTOEMISSION; SB2TE3;

D O I：

10.1103/PhysRevLett.105.186801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Bulk Bi2Te3 is known to be a topological insulator. We investigate surface states of Bi2Te3(111) thin films of one to six quintuple layers using density-functional theory including spin-orbit coupling. We construct a method to identify topologically protected surface states of thin film topological insulators. Applying this method to Bi2Te3 thin films, we find that the topological nature of the surface states remains robust with the film thickness and that the films of three or more quintuple layers have topologically nontrivial surface states, which agrees with experiments.

引用

页数：4

共 36 条

[1] PROJECTOR AUGMENTED-WAVE METHOD [J].