Ion-assisted deposition of copper using an inverter plasma

被引：1

作者：

Kiuchi, M ^{[1
]}

Murai, K

Tanaka, K

Takechi, S

Sugimoto, S

Goto, S

机构：

[1] Osaka Natl Res Inst, Ikeda, Osaka 5638577, Japan

[2] Osaka Univ, Plasma Phys Lab, Suita, Osaka 5650871, Japan

来源：

SURFACE & COATINGS TECHNOLOGY | 2001年 / 136卷 / 1-3期

关键词：

inverter; pulse plasma; copper; ion-assisted deposition;

D O I：

10.1016/S0257-8972(00)01030-6

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Adhesive Cu deposition using an inverter plasma was studied. Using an inverter power supply to produce a pulse plasma, it is possible to apply high voltage in one direction and low voltage in the other, and to perform deposition by a process of sputtering alternating with ion assistance. We deposited Cu film by setting the Cu target in front of the substrate using Si wafer and glass. Deposited films were examined by a peel-off test using Scotch tape. They exhibited excellent adhesion. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：273 / 275

页数：3