Synthesizing SnO2 thin films and characterizing sensing performances

被引:42
作者
Ohgaki, Takeshi [1 ]
Matsuoka, Ryota [2 ]
Watanabe, Ken
Matsumoto, Kenji [2 ]
Adachi, Yutaka
Sakaguchi, Isao
Hishita, Shunichi
Ohashi, Naoki [2 ]
Haneda, Hajime [2 ]
机构
[1] Natl Inst Mat Sci, Sensor Mat Ctr, Tsukuba, Ibaraki 3050044, Japan
[2] Kyushu Univ, Dept Appl Sci Elect & Mat, Fukuoka 8168580, Japan
基金
日本学术振兴会;
关键词
SnO(2); Gas sensor; Thin film; Pulsed laser deposition; Electric property; GAS SENSOR; MECHANISM; TEMPERATURE; SENSITIVITY; DEPOSITION; THICKNESS; BILAYER; HEATER; H-2;
D O I
10.1016/j.snb.2010.07.036
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
SnO(2) thin films were grown on silica glass substrates using the pulsed laser deposition (PLD) method, and their structures, electric properties, and sensor performances were examined to investigate the sensing mechanism of thin-film gas sensors. Single-phase SnO(2) films with rutile-type structures were obtained at 650 degrees C. All the SnO(2) films had many columnar grains, and the grain size increased with film thickness Measurements of the Hall coefficient at room temperature revealed that the Hall mobility of the films was independent of the film thickness. In contrast, the sensing performances of the films for NO(2) and H(2) gases respectively in an air atmosphere drastically improved for film thicknesses under 100 nm These results for the film properties and sensing performances of SnO(2) thin films are discussed in terms of a space-charge layer formed on the columnar grains (C) 2010 Elsevier B V All rights reserved
引用
收藏
页码:99 / 104
页数:6
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