SnO(2);
Gas sensor;
Thin film;
Pulsed laser deposition;
Electric property;
GAS SENSOR;
MECHANISM;
TEMPERATURE;
SENSITIVITY;
DEPOSITION;
THICKNESS;
BILAYER;
HEATER;
H-2;
D O I:
10.1016/j.snb.2010.07.036
中图分类号:
O65 [分析化学];
学科分类号:
070302 ;
081704 ;
摘要:
SnO(2) thin films were grown on silica glass substrates using the pulsed laser deposition (PLD) method, and their structures, electric properties, and sensor performances were examined to investigate the sensing mechanism of thin-film gas sensors. Single-phase SnO(2) films with rutile-type structures were obtained at 650 degrees C. All the SnO(2) films had many columnar grains, and the grain size increased with film thickness Measurements of the Hall coefficient at room temperature revealed that the Hall mobility of the films was independent of the film thickness. In contrast, the sensing performances of the films for NO(2) and H(2) gases respectively in an air atmosphere drastically improved for film thicknesses under 100 nm These results for the film properties and sensing performances of SnO(2) thin films are discussed in terms of a space-charge layer formed on the columnar grains (C) 2010 Elsevier B V All rights reserved
机构:
Tong Yang R&D Inst, Mat Res Lab, Yongin si 449870, Kyungki do, South KoreaTong Yang R&D Inst, Mat Res Lab, Yongin si 449870, Kyungki do, South Korea
机构:
Soonchunhyang Univ, Sch Informat Technol & Engn, Asan 336745, Choongnam, South KoreaSoonchunhyang Univ, Sch Informat Technol & Engn, Asan 336745, Choongnam, South Korea
Kim, CK
;
Choi, SM
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机构:Soonchunhyang Univ, Sch Informat Technol & Engn, Asan 336745, Choongnam, South Korea
Choi, SM
;
Noh, IH
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机构:Soonchunhyang Univ, Sch Informat Technol & Engn, Asan 336745, Choongnam, South Korea
Noh, IH
;
Lee, JH
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机构:Soonchunhyang Univ, Sch Informat Technol & Engn, Asan 336745, Choongnam, South Korea
Lee, JH
;
Hong, C
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机构:Soonchunhyang Univ, Sch Informat Technol & Engn, Asan 336745, Choongnam, South Korea
Hong, C
;
Chae, HB
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机构:Soonchunhyang Univ, Sch Informat Technol & Engn, Asan 336745, Choongnam, South Korea
Chae, HB
;
Jang, GE
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机构:Soonchunhyang Univ, Sch Informat Technol & Engn, Asan 336745, Choongnam, South Korea
Jang, GE
;
Park, HD
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机构:Soonchunhyang Univ, Sch Informat Technol & Engn, Asan 336745, Choongnam, South Korea
机构:
Tong Yang R&D Inst, Mat Res Lab, Yongin si 449870, Kyungki do, South KoreaTong Yang R&D Inst, Mat Res Lab, Yongin si 449870, Kyungki do, South Korea
机构:
Soonchunhyang Univ, Sch Informat Technol & Engn, Asan 336745, Choongnam, South KoreaSoonchunhyang Univ, Sch Informat Technol & Engn, Asan 336745, Choongnam, South Korea
Kim, CK
;
Choi, SM
论文数: 0引用数: 0
h-index: 0
机构:Soonchunhyang Univ, Sch Informat Technol & Engn, Asan 336745, Choongnam, South Korea
Choi, SM
;
Noh, IH
论文数: 0引用数: 0
h-index: 0
机构:Soonchunhyang Univ, Sch Informat Technol & Engn, Asan 336745, Choongnam, South Korea
Noh, IH
;
Lee, JH
论文数: 0引用数: 0
h-index: 0
机构:Soonchunhyang Univ, Sch Informat Technol & Engn, Asan 336745, Choongnam, South Korea
Lee, JH
;
Hong, C
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h-index: 0
机构:Soonchunhyang Univ, Sch Informat Technol & Engn, Asan 336745, Choongnam, South Korea
Hong, C
;
Chae, HB
论文数: 0引用数: 0
h-index: 0
机构:Soonchunhyang Univ, Sch Informat Technol & Engn, Asan 336745, Choongnam, South Korea
Chae, HB
;
Jang, GE
论文数: 0引用数: 0
h-index: 0
机构:Soonchunhyang Univ, Sch Informat Technol & Engn, Asan 336745, Choongnam, South Korea
Jang, GE
;
Park, HD
论文数: 0引用数: 0
h-index: 0
机构:Soonchunhyang Univ, Sch Informat Technol & Engn, Asan 336745, Choongnam, South Korea