Room-temperature photoluminescence, contactless electroreflectance, and x-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure

Using room-temperature photoluminescence and contactless electroreflectance we have characterized a double-side delta-doped Ga0.8Al0.2As/In0.2Ga0.8As pseudomorphic high electron mobility transistor structure fabricated by metal-organic chemical vapor deposition. Signals have been observed from every region of the sample making it possible to evaluate In and Al compositions, channel width, and two-dimensional electron gas density as well as the properties of the GaAs/GaAlAs superlattice buffer layer. The optical determination of the In composition and channel width are in good agreement with an x-ray measurement. (C) 1999 American Institute of Physics. [S0003-6951(99)03613-X].