Thermoelectric nanocomposite from the metastable void filling in caged skutterudite

被引：11

作者：

Xiong, Zhen ^{[1
]}

Xi, Lili ^{[1
]}

Ding, Juan ^{[1
]}

Chen, Xihong ^{[1
]}

Huang, Xiangyang ^{[1
]}

Gu, Hui ^{[1
]}

Chen, Lidong ^{[1
]}

Zhang, Wenqing ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

来源：

JOURNAL OF MATERIALS RESEARCH | 2011年 / 26卷 / 15期

关键词：

HIGH FIGURE; PERFORMANCE; COSB3; MERIT;

D O I：

10.1557/jmr.2011.90

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a novel approach to realize the formation of well-distributed nanodispersions in n-type filled skutterudite through the manipulation of metastable void fillers by a designed sophisticated process of materials synthesis. Metastable Ga filling in CoSb(3) is proved to happen at high temperature. The subsequent controlled annealing procedure drives Ga out of the crystal voids and finally leads to the homogeneous dispersion of GaSb nanodots with an average size of 11 nm in CoSb(3) matrix. The grain size of nanodispersions can be manipulated by the controlled cooling procedure. The well-distributed nanodispersions are observed to enhance Seebeck coefficients and reduce lattice thermal conductivity at low temperature. Therefore, the thermoelectric performance of nanocomposite is improved in the whole temperature range. The highest figure of merit (ZT) is obtained to be 1.45 at 850 K, and an average ZT of 0.99 in 300-850 K is achieved for Yb(0.26)Co(4)Sb(12)/0.2GaSb nanocomposite.

引用

页码：1848 / 1856

页数：9

共 34 条

[11] Cubic AgPbmSbTe2+m:: Bulk thermoelectric materials with high figure of merit [J].