Domain Dynamics During Ferroelectric Switching

被引:335
作者
Nelson, Christopher T. [1 ]
Gao, Peng [1 ]
Jokisaari, Jacob R. [1 ]
Heikes, Colin [2 ]
Adamo, Carolina [2 ]
Melville, Alexander [2 ]
Baek, Seung-Hyub [3 ]
Folkman, Chad M. [3 ]
Winchester, Benjamin [4 ]
Gu, Yijia [4 ]
Liu, Yuanming [5 ]
Zhang, Kui [1 ]
Wang, Enge [6 ]
Li, Jiangyu [5 ]
Chen, Long-Qing [4 ]
Eom, Chang-Beom [3 ]
Schlom, Darrell G. [2 ,7 ]
Pan, Xiaoqing [1 ]
机构
[1] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
[2] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
[3] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
[4] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[5] Univ Washington, Dept Mech Engn, Seattle, WA 98195 USA
[6] Peking Univ, Sch Phys, Beijing 100871, Peoples R China
[7] Kavli Inst Cornell Nanoscale Sci, Ithaca, NY 14853 USA
基金
美国国家科学基金会;
关键词
MECHANISM; NUCLEATION; CRYSTAL; FILMS;
D O I
10.1126/science.1206980
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The utility of ferroelectric materials stems from the ability to nucleate and move polarized domains using an electric field. To understand the mechanisms of polarization switching, structural characterization at the nanoscale is required. We used aberration-corrected transmission electron microscopy to follow the kinetics and dynamics of ferroelectric switching at millisecond temporal and subangstrom spatial resolution in an epitaxial bilayer of an antiferromagnetic ferroelectric (BiFeO3) on a ferromagnetic electrode (La0.7Sr0.3MnO3). We observed localized nucleation events at the electrode interface, domain wall pinning on point defects, and the formation of ferroelectric domains localized to the ferroelectric and ferromagnetic interface. These results show how defects and interfaces impede full ferroelectric switching of a thin film.
引用
收藏
页码:968 / 971
页数:5
相关论文
共 31 条
[1]   POSSIBLE SPECIES OF FERROELASTIC CRYSTALS AND OF SIMULTANEOUSLY FERROELECTRIC AND FERROELASTIC CRYSTALS [J].
AIZU, K .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (02) :387-&
[2]  
Baek SH, 2010, NAT MATER, V9, P309, DOI [10.1038/nmat2703, 10.1038/NMAT2703]
[3]   Direct Observation of Capacitor Switching Using Planar Electrodes [J].
Balke, Nina ;
Gajek, Martin ;
Tagantsev, Alexander K. ;
Martin, Lane W. ;
Chu, Ying-Hao ;
Ramesh, Ramamoorthy ;
Kalinin, Sergei V. .
ADVANCED FUNCTIONAL MATERIALS, 2010, 20 (20) :3466-3475
[4]   Impact of misfit dislocations on the polarization instability of epitaxial nanostructured ferroelectric perovskites [J].
Chu, MW ;
Szafraniak, I ;
Scholz, R ;
Harnagea, C ;
Hesse, D ;
Alexe, M ;
Gösele, U .
NATURE MATERIALS, 2004, 3 (02) :87-90
[5]   Electric-field control of local ferromagnetism using a magnetoelectric multiferroic [J].
Chu, Ying-Hao ;
Martin, Lane W. ;
Holcomb, Mikel B. ;
Gajek, Martin ;
Han, Shu-Jen ;
He, Qing ;
Balke, Nina ;
Yang, Chan-Ho ;
Lee, Donkoun ;
Hu, Wei ;
Zhan, Qian ;
Yang, Pei-Ling ;
Fraile-Rodriguez, Arantxa ;
Scholl, Andreas ;
Wang, Shan X. ;
Ramesh, R. .
NATURE MATERIALS, 2008, 7 (06) :478-482
[6]   Band gap and Schottky barrier heights of multiferroic BiFeO3 [J].
Clark, S. J. ;
Robertson, J. .
APPLIED PHYSICS LETTERS, 2007, 90 (13)
[7]   Strain control of domain-wall stability in epitaxial BiFeO3 (110) films [J].
Cruz, M. P. ;
Chu, Y. H. ;
Zhang, J. X. ;
Yang, P. L. ;
Zavaliche, F. ;
He, Q. ;
Shafer, P. ;
Chen, L. Q. ;
Ramesh, R. .
PHYSICAL REVIEW LETTERS, 2007, 99 (21)
[8]   Physics of thin-film ferroelectric oxides [J].
Dawber, M ;
Rabe, KM ;
Scott, JF .
REVIEWS OF MODERN PHYSICS, 2005, 77 (04) :1083-1130
[9]   Electronic structure of La0.7Sr0.3MnO3 thin films for hybrid organic/inorganic spintronics applications [J].
de Jong, MP ;
Dediu, VA ;
Taliani, C ;
Salaneck, WR .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (11) :7292-7296
[10]   Study of defect-dipoles in an epitaxial ferroelectric thin film [J].
Folkman, C. M. ;
Baek, S. H. ;
Nelson, C. T. ;
Jang, H. W. ;
Tybell, T. ;
Pan, X. Q. ;
Eom, C. B. .
APPLIED PHYSICS LETTERS, 2010, 96 (05)