Valley splitting and magnetic anisotropy in two-dimensional VI3/MSe2 (M = W, Mo) heterostructures

被引:12
作者
Fang, Xiaotian [1 ]
Zhou, Baozeng [1 ]
Sun, Nan [1 ]
Fu, Luqian [1 ]
Wang, Xiaocha [1 ]
机构
[1] Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin Key Lab Film Elect & Communicate Devices, Tianjin 300384, Peoples R China
关键词
INTRINSIC FERROMAGNETISM; POLARIZATION; MONOLAYER; TEMPERATURE; DISCOVERY; ENERGY;
D O I
10.1039/d1cp05135k
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
As a new van der Waals ferromagnetic material, VI3 can be used to lift the valley degeneracy of transition metal dichalcogenides at the K ' and K points. Here, the electronic structure and magnetic anisotropy of the VI3/MSe2 (M = W, Mo) heterostructures are studied. The VI3/WSe2 heterostructure is semiconducting with a band gap of 0.26 eV, while the VI3/MoSe2 heterostructure is metallic. Considering the spin-orbit-coupling, a maximum valley splitting of 3.1 meV appears in the VI3/WSe2 heterostructure. The biaxial strain can tune the valley splitting and magnetic anisotropy of VI3/MSe2 heterostructures. In the VI3/WSe2 heterostructure, which has the most stable stacking, valley splitting can be increased from 1.8 meV at 4% compressive strain to 3.1 meV at 4% tensile strain. At a biaxial strain of -2% to 4%, the VI3/WSe2 heterostructure maintains a small perpendicular magnetic anisotropy, while the VI3/MoSe2 heterostructure shows in-plane magnetic anisotropy under different strains. The significantly tunable electronic structure and magnetic anisotropy under biaxial strain suggest that the VI3/MSe2 heterostructures have potential applications in spintronic devices.
引用
收藏
页码:4374 / 4383
页数:10
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