Integrated hybrid silicon DFB laser-EAM array using quantum well intermixing

被引：36

作者：

Jain, Siddharth R. ^{[1
]}

Sysak, Matthew N. ^{[2
]}

Kurczveil, Geza ^{[1
]}

Bowers, John E. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect Engn, Santa Barbara, CA 93106 USA

[2] Intel Corp, Photon Technol Labs, Santa Clara, CA 95054 USA

来源：

OPTICS EXPRESS | 2011年 / 19卷 / 14期

关键词：

D O I：

10.1364/OE.19.013692

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate multiple bandgap integration on the hybrid silicon platform using quantum well intermixing. A broadband DFB laser array and a DFB-EAM array are realized on a single chip using four bandgaps defined by ion implantation enhanced disordering. The broadband laser array uses two bandgaps with 17 nm blue shift to compensate for gain roll-off while the integrated DFB-EAMs use the as-grown bandgap for optical gain and a 30 nm blue shifted bandgap for modulation. The multi-channel DFB array includes 13 lasers with >90 nm gain-bandwidth. The transponder includes four DFB-EAMs with14 dB DC extinction at 4 V bias. (C) 2011 Optical Society of America

引用

页码：13692 / 13699

页数：8

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