Room-temperature continuous-wave operation of GaInNAsSb laser diodes at 1.55 μm

被引：17

作者：

Gupta, JA ^{[1
]}

Barrios, PJ

Zhang, X

Lapointe, J

Poitras, D

Pakulski, G

Wu, X

Delâge, A

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[2] Univ Ottawa, Sch Informat Technol & Engn, Ottawa, ON K1N 6N5, Canada

来源：

ELECTRONICS LETTERS | 2005年 / 41卷 / 19期

关键词：

D O I：

10.1049/el:20052712

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first 1.55 mu m room-temperature continuous-wave (CW) operation of GaAs-based laser diodes utilising GaInNAsSb/GaNAs double quantum well active regions grown by molecular beam epitaxy is reported. In electrically-pumped CW operation the narrow ridge waveguide devices have a room temperature lasing wavelength of 1550 run near threshold, increasing to 1553 nm at thermal rollover. The CW threshold current was 132 mA for a 3 x 589 mu m device, with a characteristic temperature of 83 K, measured in pulsed mode between 20 and 70 degrees C.

引用

页码：1060 / 1062

页数：3

共 4 条

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ELECTRONICS LETTERS, 2004, 40 (17) :1060-1061

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