Large-Scale Test Circuits for High-Speed and Highly Accurate Evaluation of Variability and Noise in Metal-Oxide-Semiconductor Field-Effect Transistor Electrical Characteristics

被引:21
作者
Kumagai, Yuki [1 ]
Abe, Kenichi [1 ]
Fujisawa, Takafumi [1 ]
Watabe, Shunichi [1 ]
Kuroda, Rihito [1 ]
Miyamoto, Naoto [2 ]
Suwa, Tomoyuki [2 ]
Teramoto, Akinobu [2 ]
Sugawa, Shigetoshi [1 ,2 ]
Ohmi, Tadahiro [2 ]
机构
[1] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 9808579, Japan
[2] Tohoku Univ, New Ind Creat Hatchery Ctr, Sendai, Miyagi 9808579, Japan
关键词
THRESHOLD VOLTAGE FLUCTUATION; FLASH MEMORY; NUMBER;
D O I
10.1143/JJAP.50.106701
中图分类号
O59 [应用物理学];
学科分类号
摘要
To develop a new process technology for suppressing the variability and noise in metal-oxide-semiconductor field-effect transistors (MOSFETs) for large-scale integrated circuits, accurate and rapid measurement test circuits for the evaluation of a large number of MOSFET electrical characteristics were developed. These test circuits contain current-to-voltage conversion circuits and simple scanning circuits in order to achieve rapid and accurate evaluation for a wide range of measurement currents. The test circuits were fabricated and the variabilities and noises in drain-source current, gate leakage current, and p-n junction leakage current were evaluated using a large-scale test circuit. (C) 2011 The Japan Society of Applied Physics
引用
收藏
页数:11
相关论文
共 50 条
  • [1] Random telegraph signal statistical analysis using a very large-scale array TEG with IM MOSFETs
    Abe, K.
    Sugawa, S.
    Watabe, S.
    Miyamoto, N.
    Teramoto, A.
    Kamata, Y.
    Shibusawa, K.
    Toita, M.
    Ohmi, I.
    [J]. 2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2007, : 210 - +
  • [2] Statistical Evaluation of Dynamic Junction Leakage Current Fluctuation Using a Simple Arrayed Capacitors Circuit
    Abe, Kenichi
    Fujisawa, Takafumi
    Suzuki, Hiroyoshi
    Watabe, Shunichi
    Kuroda, Rihito
    Sugawa, Shigetoshi
    Teramoto, Akinobu
    Ohmi, Tadahiro
    [J]. 2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2010, : 683 - 688
  • [3] A Test Structure for Statistical Evaluation of pn Junction Leakage Current Based on CMOS Image Sensor Technology
    Abe, Kenichi
    Fujisawa, Takafumi
    Suzuki, Hiroyoshi
    Watabe, Shunichi
    Kuroda, Rihito
    Sugawa, Shigetoshi
    Teramoto, Akinobu
    Ohmi, Tadahiro
    [J]. 2010 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 23RD IEEE ICMTS CONFERENCE PROCEEDINGS, 2010, : 18 - 22
  • [4] Experimental Investigation of Effect of Channel Doping Concentration on Random Telegraph Signal Noise
    Abe, Kenichi
    Teramoto, Akinobu
    Watabe, Shunichi
    Fujisawa, Takafumi
    Sugawa, Shigetoshi
    Kamata, Yutaka
    Shibusawa, Katsuhiko
    Ohmi, Tadahiro
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04)
  • [5] Anomalous Random Telegraph Signal Extractions from a Very Large Number of n-Metal Oxide Semiconductor Field-Effect Transistors Using Test Element Groups with 0.47 Hz-3.0 MHz Sampling Frequency
    Abe, Kenichi
    Fujisawa, Takafumi
    Teramoto, Akinobu
    Watabe, Shunichi
    Sugawa, Shigetoshi
    Ohmi, Tadahiro
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)
  • [6] AGARWAL K, 2006, S VLSI CIRC, P67
  • [7] Fast Characterization of Threshold Voltage Fluctuation in MOS Devices
    Agarwal, Kanak
    Hayes, Jerry
    Nassif, Sani
    [J]. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2008, 21 (04) : 526 - 533
  • [8] Statistical analysis of SRAM cell stability
    Agarwal, Kanak
    Nassif, Sani
    [J]. 43RD DESIGN AUTOMATION CONFERENCE, PROCEEDINGS 2006, 2006, : 57 - +
  • [9] RTS amplitudes in decananometer MOSFETs: 3-D Simulation Study
    Asenov, A
    Balasubramaniam, R
    Brown, AR
    Davies, JH
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (03) : 839 - 845
  • [10] Cheng B, 2004, ESSCIRC 2004: PROCEEDINGS OF THE 30TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE, P219