Large-Scale Test Circuits for High-Speed and Highly Accurate Evaluation of Variability and Noise in Metal-Oxide-Semiconductor Field-Effect Transistor Electrical Characteristics

被引：21

作者：

Kumagai, Yuki ^{[1
]}

Abe, Kenichi ^{[1
]}

Fujisawa, Takafumi ^{[1
]}

Watabe, Shunichi ^{[1
]}

Kuroda, Rihito ^{[1
]}

Miyamoto, Naoto ^{[2
]}

Suwa, Tomoyuki ^{[2
]}

Teramoto, Akinobu ^{[2
]}

Sugawa, Shigetoshi ^{[1
,2
]}

Ohmi, Tadahiro ^{[2
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 9808579, Japan

[2] Tohoku Univ, New Ind Creat Hatchery Ctr, Sendai, Miyagi 9808579, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 10期

关键词：

THRESHOLD VOLTAGE FLUCTUATION; FLASH MEMORY; NUMBER;

D O I：

10.1143/JJAP.50.106701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To develop a new process technology for suppressing the variability and noise in metal-oxide-semiconductor field-effect transistors (MOSFETs) for large-scale integrated circuits, accurate and rapid measurement test circuits for the evaluation of a large number of MOSFET electrical characteristics were developed. These test circuits contain current-to-voltage conversion circuits and simple scanning circuits in order to achieve rapid and accurate evaluation for a wide range of measurement currents. The test circuits were fabricated and the variabilities and noises in drain-source current, gate leakage current, and p-n junction leakage current were evaluated using a large-scale test circuit. (C) 2011 The Japan Society of Applied Physics

引用

页数：11

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