Room temperature continuous wave operation of InAs-based quantum cascade lasers at 15 μm

被引：42

作者：

Baranov, Alexei N. ^{[1
]}

Bahriz, Michael ^{[1
]}

Teissier, Roland ^{[1
]}

机构：

[1] Univ Montpellier, Inst Elect & Syst, UMR CNRS 5214, F-34095 Montpellier, France

来源：

OPTICS EXPRESS | 2016年 / 24卷 / 16期

关键词：

GUIDE;

D O I：

10.1364/OE.24.018799

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report low threshold InAs/AlSb quantum cascade lasers emitting near 15 mu m. The devices are based on a vertical design similar to those employed previously in far infrared InAs-based QCLs, whereas the doping level of the active core is considerably decreased. The lasers exhibit a threshold current density as low as 730 A/cm(2) in pulsed mode at room temperature and can operate in this regime up to 410K. The continuous wave regime of operation has been achieved in these devices at temperatures up to 20 degrees C. The cw regime is demonstrated for InAs-based QCLs for the first time at room temperature. (C) 2016 Optical Society of America

引用

页码：18799 / 18806

页数：8

共 23 条

[1] Doping in quantum cascade lasers. I. InAlAs-InGaAs/InP midinfrared devices [J].

Aellen, Thierry ;

Beck, Mattias ;

Hoyler, Nicolas ;

Giovannini, Marcella ;

Faist, Jerome ;

Gini, Emilio .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (04)

[2] High temperature operation of far infrared (λ ≈20 μm) InAs/AlSb quantum cascade lasers with dielectric waveguide [J].

Bahriz, M. ;

Lollia, G. ;

Baranov, A. N. ;

Teissier, R. .

OPTICS EXPRESS, 2015, 23 (02) :1523-1528

[3] Quantum Cascade Lasers in the InAs/AlSb Material System [J].

Baranov, Alexei N. ;

Teissier, Roland .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2015, 21 (06) :85-96

[4] Influence of the material parameters on quantum cascade devices [J].

Benveniste, E. ;

Vasanelli, A. ;

Delteil, A. ;

Devenson, J. ;

Teissier, R. ;

Baranov, A. ;

Andrews, A. M. ;

Strasser, G. ;

Sagnes, I. ;

Sirtori, C. .

APPLIED PHYSICS LETTERS, 2008, 93 (13)

[5] Temperature sensitivity of the electro-optical characteristics for mid-infrared (λ=3-16 μm)-emitting quantum cascade lasers [J].

Botez, Dan ;

Chang, Chun-Chieh ;

Mawst, Luke J. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 49 (04)

[6] InAs based terahertz quantum cascade lasers [J].

Brandstetter, Martin ;

Kainz, Martin A. ;

Zederbauer, Tobias ;

Krall, Michael ;

Schoenhuber, Sebastian ;

Detz, Hermann ;

Schrenk, Werner ;

Andrews, Aaron Maxwell ;

Strasser, Gottfried ;

Unterrainer, Karl .

APPLIED PHYSICS LETTERS, 2016, 108 (01)

[7] Quantum cascade lasers emitting near 2.6 μm [J].

Cathabard, O. ;

Teissier, R. ;

Devenson, J. ;

Moreno, J. C. ;

Baranov, A. N. .

APPLIED PHYSICS LETTERS, 2010, 96 (14)

[8] High temperature, single mode, long infrared (λ=17.8 μm) InAs-based quantum cascade lasers [J].

Chastanet, D. ;

Bousseksou, A. ;

Lollia, G. ;

Bahriz, M. ;

Julien, F. H. ;

Baranov, A. N. ;

Teissier, R. ;

Colombelli, R. .

APPLIED PHYSICS LETTERS, 2014, 105 (11)

[9] Long-infrared InAs-based quantum cascade lasers operating at 291 K (λ=19 μm) with metal-metal resonators [J].

Chastanet, D. ;

Lollia, G. ;

Bousseksou, A. ;

Bahriz, M. ;

Laffaille, P. ;

Baranov, A. N. ;

Julien, F. ;

Colombelli, R. ;

Teissier, R. .

APPLIED PHYSICS LETTERS, 2014, 104 (02)

[10] FREE-CARRIER ABSORPTION IN N-TYPE INDIUM ARSENIDE [J].

CULPEPPE.RM ;

DIXON, JR .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1968, 58 (01) :96-&

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