High-Speed Oxide Confined 850-nm VCSELs Operating Error-Free at 47 Gbit/s at room temperature and 40 Gbit/s at 85°C

被引：0

作者：

Westbergh, P. ^{[1
]}

Safaisini, R. ^{[1
]}

Haglund, E. ^{[1
]}

Gustavsson, J. S. ^{[1
]}

Larsson, A. ^{[1
]}

Joel, A. ^{[2
]}

机构：

[1] Chalmers Univ Technol, Photon Lab, Dept Microtechnol & Nanosci MC2, SE-41296 Gothenburg, Sweden

[2] IQE Europe Ltd, Cardiff CF3 0LW, S Glam, Wales

来源：

2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE AND INTERNATIONAL QUANTUM ELECTRONICS CONFERENCE (CLEO EUROPE/IQEC) | 2013年

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D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页数：1

共 4 条

[1]

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[3] High-speed 850 nm VCSELs with 28 GHz modulation bandwidth operating error-free up to 44 Gbit/s [J].

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Safaisini, R. ;

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Gustavsson, J. S. ;

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[4] Impact of Photon Lifetime on High-Speed VCSEL Performance [J].

Westbergh, Petter ;

Gustavsson, Johan S. ;

Kogel, Benjamin ;

Haglund, Asa ;

Larsson, Anders .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2011, 17 (06) :1603-1613

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