A comparative study of CuInSe2 and CuIn3Se5 films using transmission electron microscopy, optical absorption and Rutherford backscattering spectrometry

被引：14

作者：

Malar, P ^{[1
]}

Kasiviswanathan, S ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, India

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2005年 / 88卷 / 03期

关键词：

thin films; CuInSe2; CuIn3Se5; TEM; RBS;

D O I：

10.1016/j.solmat.2004.11.002

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

CuInSe2 and CuIn3Se5 films were grown by stepwise flash evaporation onto glass and Si substrates held at different temperatures. Transmission electron microscopy (TEM) studies revealed that the films grown above 370 K were polycrystalline, with CuInSe2 films exhibiting larger average grain size than Culn(3)Se(5). Optical absorption studies yielded hand gaps of 0.97 +/- 0.02 and 1.26 +/- 0.02eV for CuInSe2 and Culn(3)Se(5), respectively. Rutherford backscattering spectrometry (RBS) study of the films on Si showed that CulnSe(2)/Si structures included an inhomogeneous interface region consisting of Cu and Si, whereas CuIn3Se5/Si structures presented sharp interface. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：281 / 292

页数：12

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