Role of metal impurities in multicrystalline silicon solar cell degradation

被引：3

作者：

Hu, Zechen ^{[1
,2
]}

Lin, Dehang ^{[1
,2
]}

Yu, Xuegong ^{[1
,2
]}

Seiffert, Christoph ^{[3
,4
]}

Kuznetsov, Andrej ^{[3
,4
]}

Yang, Deren ^{[1
,2
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

[2] Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China

[3] Univ Oslo, Ctr Mat Sci & Nanotechnol, N-0316 Oslo, Norway

[4] Univ Oslo, Dept Phys, N-0316 Oslo, Norway

来源：

APPLIED PHYSICS EXPRESS | 2021年 / 14卷 / 11期

基金：

中国国家自然科学基金;

关键词：

photovoltaics; multi-crystalline silicon (mc-Si); light and elevated temperature-induced degradation (LeTID); metal impurity; electrically active defect; LIGHT-INDUCED DEGRADATION; CARRIER-INDUCED DEGRADATION; ROOT-CAUSE; ILLUMINATION; PASSIVATION; IMPACT; DEFECT;

D O I：

10.35848/1882-0786/ac2ae6

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Controlling light- and elevated temperature-induced degradation (LeTID) is one of the great challenges in silicon photovoltaics industry. Here, we performed systematic high-resolution elemental mapping and spectroscopic electrical measurements in multi-crystalline silicon wafers that underwent standard solar cell processing during LeTID. The prominent correlations between the metal precipitate formation/dissociation steps and the appearance of band-like or localized electronic states during LeTID evolution were observed. Of note, the re-precipitation of iron was found to co-localize with copper atom agglomerations. Finally, we discuss the potential mechanisms that enhance metal redistributions in mc-Si during LeTID in the context of the existing literature.

引用

页数：4

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