Quantum dot intermediate band solar cell material systems with negligable valence band offsets

被引：29

作者：

Levy, MY ^{[1
]}

Honsberg, C ^{[1
]}

Marti, A ^{[1
]}

Luque, A ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005 | 2005年

关键词：

D O I：

10.1109/PVSC.2005.1488076

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper material triads (quantum-dot/barrier/substrate) are presented that may implement quantum dot intermediate band solar cells with conversion efficiencies greater than 60%. Triads whose barrier material and substrate material are lattice-matched are presented. In addition, triads are presented with the lattice constant of the substrate in-between the lattice constant of the barrier and the lattice constant of the quantum dot. The latter case provides triads that may remove strain during epitaxial growth.

引用

页码：90 / 93

页数：4

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