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Magnon-Dragged Magnetoresistance and Spin Seebeck Effect in YIG/IrMn Thin Films
被引:2
作者:
Cai, Y. Z.
[1
]
Li, W. T.
[1
]
Wu, Y.
[1
]
Meng, K. K.
[1
]
Miao, J.
[1
]
Guang, X. X.
[1
]
Jiang, Y.
[1
]
机构:
[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
基金:
中国国家自然科学基金;
关键词:
Ir20Mn80 (IrMn);
magnon-dragged magnetoresistance;
magnon transport;
spin Seebeck effect (SSE);
MAGNETIC INSULATOR;
TRANSPORT;
D O I:
10.1109/TMAG.2018.2846766
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
We report the magnon-dragged magnetoresistance and spin Seebeck effect simultaneously in lateral yttrium iron garnet (YIG)/Ir20Mn80 thin films, which are detected as R-drag and R-SSE, respectively, namely, the nonlocal inverse spin Hall voltages quantified by the injected current. According to their different dependences on applied current, R-drag and R-SSE can be separated as the antisymmetric and symmetric part of the nonlocal signals. By a simple magnon diffusion model, the diffusion length of electrically generated magnons is calculated which is comparable to the values reported in YIG/Pt structures. The low magnetic field and the temperature dependences of R-drag and R-SSE are found to be different, indicating that the origin and transport properties of magnons associated with these two effects are distinct.
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