Design of Wide Temperature Range Resonant-Mode Absolute MEMS Pressure Sensor

被引:0
作者
Xereas, George [1 ]
Allan, Charles [1 ]
Chodavarapu, Vamsy P. [1 ]
机构
[1] McGill Univ, Dept Elect & Comp Engn, 3480 Univ St, Montreal, PQ H3A 0E9, Canada
来源
PROCEEDINGS OF THE 2015 IEEE NATIONAL AEROSPACE AND ELECTRONICS CONFERENCE (NAECON) | 2015年
关键词
MEMS resonator; Double-Ended Tuning Fork (DETF) resonator; wide-temperature range pressure sensor; resonant pressure sensor;
D O I
暂无
中图分类号
V [航空、航天];
学科分类号
08 ; 0825 ;
摘要
We describe the design and fabrication of a resonant absolute MEMS pressure sensor using a semi-custom fabrication process. We selected a double anchored Double-Ended Tuning Fork (DETF) resonator for this work. The pressure sensor design is based on fabricating two resonant structures side by side using MEMS Integrated Design for Inertial Sensors (MIDIS) process, a commercial pure-play MEMS process recently introduced by Teledyne DALSA Semiconductor Inc. (TDSI). The fabricated devices from MIDIS process are then post-processed to etch the handle wafer below one of the resonator devices (sensor) down to a pre-determined thickness that bends in response to the external ambient pressure. The second resonator is used as the reference where the handle wafer is left untouched. The proposed differential setup enables the pressure sensor to operate over a wide temperature range from -55 degrees C to 225 degrees C.
引用
收藏
页码:232 / 236
页数:5
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