Formation of a precursor layer in self-assembled CdTe quantum dots grown on ZnSe by molecular beam epitaxy

被引：12
作者：
Yang, C. S. [1 ]
Wang, J. S.
Lai, Y. J.
Luo, C. W.
Chen, D. S.
Shih, Y. T.
Jian, S. R.
Chou, W. C.
机构：
[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan
[2] Chung Yuan Christian Univ, Dept Phys, Chungli 32023, Taiwan
[3] Chung Yuan Christian Univ, Ctr Nanotechnol, Chungli 32023, Taiwan
[4] Chung Yuan Christian Univ, R&D Ctr Membrane Technol, Chungli 32023, Taiwan
[5] Natl Changhua Univ Educ, Dept Phys, Changhua 50058, Taiwan
[6] I Shou Univ, Dept Mat Sci & Engn, Kaohsiung 840, Taiwan
来源：
NANOTECHNOLOGY | 2007年 / 18卷 / 38期
关键词：
D O I：
10.1088/0957-4484/18/38/385602
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The growth mode of CdTe quantum dots ( QDs) grown on highly lattice-mismatched ZnSe buffer was investigated. CdTe QDs ( 0.6 to 5.0 mono-layers ( MLs)) were deposited on the Se-stabilized ZnSe buffer layers using an alternating supply of Cd and Te atomic sources. Cross-sectional transmission electron microscopy and photoluminescence ( PL) measurements revealed the existence of a CdSe-like two-dimensional precursor layer ( PCL). The prominent difference in the temperature-dependent PL peak shift was associated with the emissions from the respective CdSe PCL and CdTe QDs. In addition, the PL excitation measurement demonstrated the existence of the first QD excited excitonic state.
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页数：5
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