Bottom-ARC optimization methodology for 0.25 μm lithography and beyond

被引：10

作者：

de Beeck, MO ^{[1
]}

Vandenberghe, G ^{[1
]}

Jaenen, P ^{[1
]}

Zhang, FH ^{[1
]}

Delvaux, C ^{[1
]}

Richardson, P ^{[1
]}

van Puyenbroeck, I ^{[1
]}

Ronse, K ^{[1
]}

Lamb, JE ^{[1
]}

van der Hilst, JBC ^{[1
]}

van Wingerden, J ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

OPTICAL MICROLITHOGRAPHY XI | 1998年 / 3334卷

关键词：

DUV lithography; CD control; BARC; process optimization; planarization; BARC etch; substrate reflections; topographical swing curves;

D O I：

10.1117/12.310762

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reports on an optimization methodology for BARC/resist processes in order to obtain best CD-control on various substrate topographies. A selection of resist and BARC materials is studied by means of simulations and experiments. Two BARC properties, turned out to be of major importance: planarization effects on topography and etch behaviour. The topography itself is very important too: step height and lateral dimensions have a severe influence on CD control. Based on a new evaluation technique, the use of topographical swing curves, the optimum thickness of the BARC layer and of the resist layer are determined.

引用

页码：322 / 336

页数：3