Low-Voltage-Driven Flexible InGaZnO Thin-Film Transistor With Small Subthreshold Swing

被引：60

作者：

Su, Nai-Chao ^{[1
]}

Wang, Shui-Jinn ^{[1
]}

Huang, Chin-Chuan ^{[1
]}

Chen, Yu-Han ^{[1
]}

Huang, Hao-Yuan ^{[1
]}

Chiang, Chen-Kuo ^{[1
]}

Chin, Albert ^{[2
,3
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[3] Natl Chiao Tung Univ, Nanoelect Consortium Taiwan, Hsinchu 30010, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 07期

关键词：

Flexible thin-film transistors (TFTs); HfLaO; high-kappa; InGaZnO (IGZO); TEMPERATURE; TFT;

D O I：

10.1109/LED.2010.2047232

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A flexible thin-film transistor (TFT) was made by integrating a high-kappa HfLaO gate dielectric and an amorphous-InGaZnO (a-IGZO) active layer on a polyimide substrate. This flexible HfLaO/a-IGZO TFT exhibits a low threshold voltage of 0.1 V, a small subthreshold swing of 0.18 V/dec, a high maximum saturation mobility of 22.1 cm(2)/V . s, and an acceptable ON/OFF current ratio of 2 x 10(5). The low threshold voltage and small subthreshold swing allow the device to operate at 1.5 V for low-power applications, which should enable significant future progress in energy efficiency.

引用

页码：680 / 682

页数：3

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