A study of initial growth mechanism of c-GaN on GaAs(100) by molecular beam epitaxy

The surface morphology of several kinds of buffer layers. nitrided GaAs(1 0 0), low-temperature GaN, GaAs buffer layer, and GaAlAs buffer layer, is investigated for rowing c-GaN using GaAs(1 0 0) by molecular beam epitaxy. The possibility of an epitaxial GaAlAs buffer layer for growing high-quality c-GaN on GaAs(1 0 0) is considered. A c-GaN Film with a few h-GaN imperfections is successfully grown on a GaAs buffer layer, and the occurrence of h-GaN is drastically reduced by introducing an epitaxial GaAs buffer layer. (C) 1998 Published by Elsevier Science B.V. All rights reserved.