Wideband DHBTs using a graded carbon-doped InGaAS base

被引：31
作者：
Dahlström, M
Fang, XM
Lubyshev, D
Urteaga, M
Krishnan, S
Parthasarathy, N
Kim, YM
Wu, Y
Fastenau, JM
Liu, WK
Rodwell, MJW
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] IQE Inc, Bethlehem, PA 18015 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 07期
关键词：
carbon doping; heterojunetion bipolar transistor; palladium;
D O I：
10.1109/LED.2003.815009
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report an InP/InGaAs/InP double heterojunction bipolar transistor (DHBT), fabricated using a mesa structure, exhibiting 282 GHz f(tau) and 400 GHz f(max). The DHBT employs a 30 nm InGaAs base with carbon doping graded from 8 . 10(19)/cm(3) to 5 . 10(19)/cm(3), an InP collector, and an InGaAs/InAlAs base-collector superlattice grade, with a total 217 nm collector depletion layer thickness. The low base sheet (580 Omega) and contact (<10 Omega-mu m(2)) resistivities are in part responsible for the high f(max) observed.
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收藏
页码：433 / 435
页数：3
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