Total ionizing dose effects on Ag/ amorphous Bi3.15Nd0.85Ti3O12/Pt resistive switching memory

被引：1

作者：

Song, H. J. ^{[1
,2
]}

Yan, W. Z. ^{[1
,2
]}

Zhong, X. L. ^{[1
,2
]}

Zheng, S. Z. ^{[1
,2
]}

Yang, Shengsheng ^{[3
]}

Xue, Yuxiong ^{[3
]}

Wang, Guangyi ^{[3
]}

Guo, H. X. ^{[1
,2
]}

Wang, J. B. ^{[1
,2
]}

机构：

[1] Xiangtan Univ, Sch Mat Sci & Engn, Xiangtan 411105, Hunan, Peoples R China

[2] Xiangtan Univ, Natl Prov Lab Special Funct Thin Film Mat, Xiangtan 411105, Hunan, Peoples R China

[3] Lanzhou Inst Phys, Natl Key Lab Sci & Technol Vacuum Technol & Phys, Lanzhou 730000, Gansu, Peoples R China

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2018年 / 219卷

基金：

中国国家自然科学基金;

关键词：

Total ionizing dose effects; Resistive switching memory; Ag electrode; Amorphous Bi3.15Nd0.85Ti3O12 thin film; RADIATION; MECHANISMS; FILAMENTS; HARDNESS; FILM;

D O I：

10.1016/j.matchemphys.2018.08.015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Here, the Ag/amorphous Bi3.15Nd0.85Ti3O12/Pt resistive switching memories were designed and prepared, and the total ionizing dose (TID) effects of Co-60 gamma-ray on the Ag/amorphous Bi3.15Nd0.85Ti3O12/Pt resistive switching memories were investigated. The results show that the resistance in low resistance state (LRS), resistance in high resistance state (HRS), and set voltage are almost immune to a TID up to 1 Mrad(Si), whereas the reset voltage and forming voltage are impacted slightly. The good radiation immunity is related to the metallic conductive filaments and the amorphous Bi3.15Nd0.85Ti3O12/Pt matrix. These results suggest that the Ag/amorphous Bi3.15Nd0.85Ti3O12/Pt devices show potential for radiation-hard electronics applications.

引用

页码：340 / 346

页数：7

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