Total ionizing dose effects on Ag/ amorphous Bi3.15Nd0.85Ti3O12/Pt resistive switching memory

被引：1
作者：
Song, H. J. [1 ,2 ]
Yan, W. Z. [1 ,2 ]
Zhong, X. L. [1 ,2 ]
Zheng, S. Z. [1 ,2 ]
Yang, Shengsheng [3 ]
Xue, Yuxiong [3 ]
Wang, Guangyi [3 ]
Guo, H. X. [1 ,2 ]
Wang, J. B. [1 ,2 ]
机构：
[1] Xiangtan Univ, Sch Mat Sci & Engn, Xiangtan 411105, Hunan, Peoples R China
[2] Xiangtan Univ, Natl Prov Lab Special Funct Thin Film Mat, Xiangtan 411105, Hunan, Peoples R China
[3] Lanzhou Inst Phys, Natl Key Lab Sci & Technol Vacuum Technol & Phys, Lanzhou 730000, Gansu, Peoples R China
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2018年 / 219卷
基金：
中国国家自然科学基金;
关键词：
Total ionizing dose effects; Resistive switching memory; Ag electrode; Amorphous Bi3.15Nd0.85Ti3O12 thin film; RADIATION; MECHANISMS; FILAMENTS; HARDNESS; FILM;
D O I：
10.1016/j.matchemphys.2018.08.015
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Here, the Ag/amorphous Bi3.15Nd0.85Ti3O12/Pt resistive switching memories were designed and prepared, and the total ionizing dose (TID) effects of Co-60 gamma-ray on the Ag/amorphous Bi3.15Nd0.85Ti3O12/Pt resistive switching memories were investigated. The results show that the resistance in low resistance state (LRS), resistance in high resistance state (HRS), and set voltage are almost immune to a TID up to 1 Mrad(Si), whereas the reset voltage and forming voltage are impacted slightly. The good radiation immunity is related to the metallic conductive filaments and the amorphous Bi3.15Nd0.85Ti3O12/Pt matrix. These results suggest that the Ag/amorphous Bi3.15Nd0.85Ti3O12/Pt devices show potential for radiation-hard electronics applications.
引用
收藏
页码：340 / 346
页数：7
相关论文
共 36 条
  • [1] Radiation-induced soft errors in advanced semiconductor technologies
    Baumann, RC
    [J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2005, 5 (03) : 305 - 316
  • [2] Proton-based total-dose irradiation effects on Cu/HfO2:Cu/Pt ReRAM devices
    Butcher, Brian
    He, Xiaoli
    Huang, Mengbing
    Wang, Yan
    Liu, Qi
    Lv, Hangbing
    Liu, Ming
    Wang, Wei
    [J]. NANOTECHNOLOGY, 2010, 21 (47)
  • [3] Effects of the compliance current on the resistive switching behavior of TiO2 thin films
    Cao, X.
    Li, X. M.
    Gao, X. D.
    Zhang, Y. W.
    Liu, X. J.
    Wang, Q.
    Chen, L. D.
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 97 (04): : 883 - 887
  • [4] Evolution of resistive switching mechanism through H2O2 sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure
    Chakrabarti, Somsubhra
    Panja, Rajeswar
    Roy, Sourav
    Roy, Anisha
    Samanta, Subhranu
    Dutta, Mrinmoy
    Ginnaram, Sreekanth
    Maikap, Siddheswar
    Cheng, Hsin-Ming
    Tsai, Ling-Na
    Chang, Ya-Ling
    Mahapatra, Rajat
    Jana, Debanjan
    Qiu, Jian-Tai
    Yang, Jer-Ren
    [J]. APPLIED SURFACE SCIENCE, 2018, 433 : 51 - 59
  • [5] Single-Event Effect Performance of a Conductive-Bridge Memory EEPROM
    Chen, Dakai
    Wilcox, Edward
    Berg, Melanie
    Kim, Hak
    Phan, Anthony
    Figueiredo, Marco
    Seidleck, Christina
    LaBel, Kenneth
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (06) : 2703 - 2708
  • [6] Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors
    Chen, W.
    Fang, R.
    Barnaby, H. J.
    Balaban, M. B.
    Gonzalez-Velo, Y.
    Taggart, J. L.
    Mahmud, A.
    Holbert, K.
    Edwards, A. H.
    Kozicki, M. N.
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 64 (01) : 269 - 276
  • [7] Total Ionizing Dose Effect on Low On/Off Switching Ratio TiO2 Memristive Memories
    Chi, Yaqing
    Liu, Rongrong
    Tang, Zhensen
    Song, Ruiqiang
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 61 (04) : 1889 - 1893
  • [8] SCHOTTKY EMISSION THROUGH THIN INSULATING FILMS
    EMTAGE, PR
    TANTRAPORN, W
    [J]. PHYSICAL REVIEW LETTERS, 1962, 8 (07) : 267 - &
  • [9] Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory
    Fang, Runchen
    Velo, Yago Gonzalez
    Chen, Wenhao
    Holbert, Keith E.
    Kozicki, Michael N.
    Barnaby, Hugh
    Yu, Shimeng
    [J]. APPLIED PHYSICS LETTERS, 2014, 104 (18)
  • [10] Radiation Effects in Flash Memories
    Gerardin, S.
    Bagatin, M.
    Paccagnella, A.
    Gruermann, K.
    Gliem, F.
    Oldham, T. R.
    Irom, F.
    Nguyen, D. N.
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (03) : 1953 - 1969
1234