Total dose and dose rate response of an AD590 temperature transducer

被引:33
作者
Pease, Ronald L. [1 ]
Dunham, Gary W.
Seiler, John E.
Platteter, Dale G.
McClure, Steven S.
机构
[1] RLP Res, Los Lunas, NM 87031 USA
[2] NAVSEA Crane, Crane, IN 47522 USA
[3] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
关键词
dose rate; enhanced low-dose-rate sensitivity; radiation effects; temperature transducer; total ionizing dose;
D O I
10.1109/TNS.2007.892262
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The total dose response of the Analog Devices AD590 is presented for a variety of irradiation test conditions. The parts packaged in flat-packs show very large enhanced low dose rate sensitive (ELDRS) response for unbiased irradiation, starting at about 20 krad, whereas parts packaged in TO-52 cans are not ELDRS. The reason for this package sensitivity appears to be a result of hydrogen trapped in the cavity of the flat-pack package. The responses at 10 mrad/s and 3 mrad/s are essentially the same, indicating that the low dose rate enhancement factor has leveled off below 10 mrad/s. Elevated temperature irradiation at 100 degrees C and 5 rad/s does not simulate the low dose rate response.
引用
收藏
页码:1049 / 1054
页数:6
相关论文
共 8 条
[1]   TOTAL DOSE RADIATION HARDNESS OF MOS DEVICES IN HERMETIC CERAMIC PACKAGES [J].
KOHLER, RA ;
KUSHNER, RA ;
LEE, KH .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (06) :1492-1496
[2]  
Lowry R. K., 1999, IEEE Transactions on Electronics Packaging Manufacturing, V22, P319, DOI 10.1109/6104.816102
[3]   Characterization of enhanced low dose rate sensitivity (ELDRS) effects using gated lateral PNP transistor structures [J].
Pease, RL ;
Platteter, DG ;
Dunham, GW ;
Seiler, JE ;
Barnaby, HJ ;
Schrimpf, RD ;
Shaneyfelt, MR ;
Maher, MC ;
Nowlin, RN .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (06) :3773-3780
[4]   An updated data compendium of enhanced low dose rate sensitive (ELDRS) bipolar linear circuits [J].
Pease, RL ;
McClure, S ;
Johnston, AH ;
Gorelick, J ;
Turflinger, TL ;
Gehlhausen, M ;
Krieg, J ;
Carriere, T ;
Shaneyfelt, M .
2001 IEEE RADIATION EFFECTS DATA WORKSHOP, WORKSHOP RECORD, 2001, :127-133
[5]   Test results of Total Ionizing Dose conducted at the Jet Propulsion Laboratory [J].
Rivas, RM ;
Johnston, AH ;
Miyahira, TF ;
Rax, BG ;
Wiedeman, MD .
2004 IEEE RADIATION EFFECTS DATA WORKSHOP, WORKSHOP RECORD, 2004, :36-41
[6]   Annealing behavior of linear bipolar devices with enhanced low-dose-rate sensitivity [J].
Shaneyfelt, MR ;
Schwank, JR ;
Fleetwood, DM ;
Pease, RL ;
Felix, JA ;
Dodd, PE ;
Maher, MC .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (06) :3172-3177
[7]   Impact of passivation layers on enhanced low-dose-rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar linear ICs [J].
Shaneyfelt, MR ;
Pease, RL ;
Schwank, JR ;
Maher, MC ;
Hash, GL ;
Fleetwood, DM ;
Dodd, PE ;
Reber, CA ;
Witczak, SC ;
Riewe, LC ;
Hjalmarson, HP ;
Banks, JC ;
Doyle, BL ;
Knapp, JA .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (06) :3171-3179
[8]   2-TERMINAL IC TEMPERATURE TRANSDUCER [J].
TIMKO, MP .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (06) :784-788